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glossary:glossary_m [2021/08/11 11:02] – [MOSFET] WortingUKglossary:glossary_m [2021/08/11 11:57] (current) – [Microprocessor] WortingUK
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 [[wp>Microprocessor|Microprocessor]] [[wp>Microprocessor|Microprocessor]]
  
 +microprocessor is a general-purpose name. Specialised devices:\\ 
 +A digital signal processor (DSP) is specialized for signal processing.\\ 
 +Graphics processing units (GPU) for rendering of images.\\ 
 +Microcontrollers integrate a microprocessor with peripheral devices in embedded systems..\\ 
 +System On Chip (SoC) often integrate one or more microprocessor cores with bus controllers.
 ===== Mobile decoder ===== ===== Mobile decoder =====
  
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 ===== MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor ===== ===== MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor =====
  
-A MOSFET is a type of transistor with a Gate, Source and Drain terminals. [[wp>MOSFET|MOSFET]] \\ +A MOSFET is a type of transistor with a Gate, Source and Drain terminals. [[wp>MOSFET|MOSFET]]. 
- They are the dominant type of transistor in electronics and in chips.\\ + They are the dominant type of transistor in electronics.\\ 
-The resistance between Source and Drain (D-S) controlled by the Voltage applied across the Gate and Source. +The resistance between Source and Drain (D-S) is controlled by the Voltage applied across the Gate and Source. 
-A Voltage across D-S causes a current to flow in the D-S resistance.\\ +A Voltage across D-S causes a current to flow in the D-S resistance. There are several sub-types...\\ 
-There are several sub-types...\\ + - N channel uses positive Voltages or P channel uses negative Voltages \\ 
- - N channel uses positive Voltages\\ + - Depletion mode uses increasing Gate Voltage to increase D-S resistance or Enhancement mode uses decreasing Gate Voltage to decrease D-S resistance\\
- P channel uses negative Voltages \\ +
- - Depletion mode uses increasing Gate Voltage to increase D-S resistance\\ +
- Enhancement mode uses decreasing Gate Voltage to decrease D-S resistance\\+
 For MERG, the common type is N channel Enhancement mode.\\ For MERG, the common type is N channel Enhancement mode.\\
 //Compapared to a Bipolar transistor, Gate = Base, Source = Emitter, Drain = Collector.// //Compapared to a Bipolar transistor, Gate = Base, Source = Emitter, Drain = Collector.//
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 The Gate exhibits a very high resistance (insulation) to the Source or Drain.\\ The Gate exhibits a very high resistance (insulation) to the Source or Drain.\\
-There being an insulation, the Gate has some capacitance to the other pins and needs to be driven by a low impedance (AC resistance) input signal. A high impedance input signal will make the device slow. An open circuit Gate can build up a charge and results in the D-S going low resistance (turns 'ON').\\ +There being an insulation, the Gate has capacitance to the other pins and needs to be driven by a low impedance (AC resistance) input signal. A high impedance input signal will make the device slow. An open circuit Gate can build up a charge and results in the D-S going low resistance (turns 'ON'). 
- +
 ===== MSAG ===== ===== MSAG =====
  
glossary/glossary_m.1628679732.txt.gz · Last modified: 2021/08/11 11:02 by WortingUK

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